20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-6960 2n7052 2N7053 to-92 to-226 npn darlington transistor this device is designed for applications requiring extremely high gain at collector currents to 1.0 a and high breakdown voltage. sourced from process 06. absolute maximum ratings* ta = 25:c unless otherwise noted symbol vceo vcbo vebo ic tj, tstg parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous operating and storage junction temperature range value 100 100 12 1.5 -55 to +150 units v v v a c these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2} these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25 c unless otherwise noted symbol pd rejc roja characteristic total device dissipation derate above 25c thermal resistance, junction to case thermal resistance, junction to ambient max 2n7052 625 5.0 83.3 200 2N7053 1,000 8.0 125 50 *nzt7053 1,000 8.0 125 units mw mw/0c c/w "c/w n'.l semi-conductors reserves the right lo change test conditions parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however n.i semi-conductors assumes no responsibility tor any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verifv that datasheets are current before placing orders.
npn darlington transistor (continued) electrical characteristics ta - 25 c unless otherwise noted symbol parameter test conditions min max units off characteristics vibrjceo v(br)cbo v,br)ebo icbo ices iebo collector-emitter breakdown voltage* collector-base breakdown voltage emitter-base breakdown voltage collector-cutoff current collector-cutoff current emitter-cutoff current lc = 1.0ma, ib = 0 lc = 100(ia, ie = 0 ie = 1.0ma, lc = 0 vca = 80 v, ie = 0 vce = 80 v, ie = 0 veb = 7.0 v, lc = 0 100 100 12 0.1 0.2 0.1 v v v ha ha ha on characteristics* hfe vce(sat) vbeioid dc current gain collector-emitter saturation voltage base-emitter on voltage lc = 100 ma, vce = 5.0v ic = 1.0a,vce = 5.0v lc = 100ma, ib = 0.1 ma lc = 100ma, vbe = 5.0v 10,000 1,000 20,000 1.5 2.0 v v small signal characteristics ft ccb transition frequency collector-base capacitance lc = 1 00ma, vce = 5.0v, vcb = 10v,f=1.0mhz 2n7052 2N7053 200 10 8.0 mhz pf pulse test: pulse width t 300 na. duty cycle 1 0% typical characteristics typical pulsed current gain collector-emitter saturation vs collector current ? voltage vs collector current 3 100 o % 0 60 q ui ">. ar. 3 20 o ? ? ?*> ?c "" ? e = ^ - - ; ;; =? ?^ = ; : mm m ? 'i -?s ? ? - - 40 ?^ \ ? ^ m - * at jj1.2 & ui g 08 p ?; ^0.4 m n p ? 1001 ^h ^?" ? _ _ ^ ^ ? " ? -t - t^ 0~001 0.01 0.1 1 '5 "10 40ftc ..? ? 1 ? 'f !5'c -? - ^ v ^ -,?' ?~'~ 100 ?] ?, 1000 j? i0- collector current (a) 8 1- collector current (ma)
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